Abstract
The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells.
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Pis’ma Zh. Éksp. Teor. Fiz. 67, No. 8, 580–585 (25 April 1998)
Published in English in the original Russian journal. Edited by Steve Torstveit.
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Timofeev, V.B., Larionov, A.V., Ioselevich, A.S. et al. Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells. Jetp Lett. 67, 613–620 (1998). https://doi.org/10.1134/1.567735
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DOI: https://doi.org/10.1134/1.567735