Abstract
The spontaneous emission of far-infrared radiation (λ≅10–20 μm) from diode structures with vertically coupled InGaAs/AlGaAs quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold.
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Pis’ma Zh. Éksp. Teor. Fiz. 67, No. 4, 256–260 (25 February 1998)
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Vorob’ev, L.E., Firsov, D.A., Shalygin, V.A. et al. Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots. Jetp Lett. 67, 275–279 (1998). https://doi.org/10.1134/1.567663
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DOI: https://doi.org/10.1134/1.567663