Abstract
Motivated by the recent observation of the metal-insulator transition in Si MOSFETs, a study is made of the quantum interference correction to the conductivity in the presence of the Bychkov-Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The antilocalization correction vanishes, however, in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si MOSFETs is discussed.
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Pis’ma Zh. Éksp. Teor. Fiz. 67, No. 2, 118–123 (25 January 1998)
Published in English in the original Russian journal. Edited by Steve Torstveit.