Abstract
The photoconductivity (PC) spectra and the induced absorption of background radiation in the energy range 10–40 meV are investigated in weakly compensated B-, Ga-, and As-doped silicon at 4.2 K. It is shown that dips corresponding to the photoionization of long-lived excited states of B and As are observed in the PC spectra on the D −(A +) bands. It is found that the frequency dependence of the PC spectra corresponds to excitation relaxation times of the order of 10−4 s for the states in the D − (A +) bands. It is established that in electric fields E>100 V/cm the PC decreases sharply, while the induced absorption of the background radiation changes very little. This confirms the conclusion that the excitation of the D − (A +) itself makes the main contribution to the PC.
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Pis’ma Zh. Éksp. Teor. Fiz. 66, No. 4, 224–227 (25 August 1997)
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Pokrovskii, Y.E., Smirnova, O.I. & Khval’kovskii, N.A. Kinetics of the photoconductivity and absorption in the D −(A +) bands in doped silicon. Jetp Lett. 66, 241–244 (1997). https://doi.org/10.1134/1.567542
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DOI: https://doi.org/10.1134/1.567542