Abstract
The impurity photoconductivity spectra of uncompensated silicon at liquid-helium temperatures under conditions of strongly suppressed background radiation (background) are studied in different electric fields E. It is established that the delocalization arising in the D − band as E increases is not associated with any changes of the fluctuation potential and is due to the direct action of the field E. A delocalization band of finite width appears abruptly at a critical value E c (∼100 V/cm) of E. The critical field E c increases with the density of charged centers in the sample.
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Pis’ma Zh. Éksp. Teor. Fiz. 65, No. 1, 56–59 (10 January 1997)
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Mel’nikov, A.P., Gurvich, Y.A., Shestakov, L.N. et al. Appearance of a band of delocalized D − states in uncompensated silicon in an electric field. Jetp Lett. 65, 59–62 (1997). https://doi.org/10.1134/1.567319
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DOI: https://doi.org/10.1134/1.567319