Abstract
Two types of excitons, localized at opposite interfaces and characterized by different magnitudes of the exchange interactions at the same radiation energies, are simultaneously in type-II GaAs/AlAs superlattices. It is shown that the additional long-wavelength luminescence line in superlattices grown with growth interruptions after the GaAs layers is due to the recombination of an exciton localized at an inverted interface in regions where the quantum-well width is increased by one monolayer.
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Pis’ma Zh. Éksp. Teor. Fiz. 64, No. 10, 701–706 (25 November 1996)
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Baranov, P.G., Romanov, N.G., Hofstaetter, A. et al. Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing. Jetp Lett. 64, 754–759 (1996). https://doi.org/10.1134/1.567293
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DOI: https://doi.org/10.1134/1.567293