Abstract
The change in the morphology of a Si(111) surface under pulsed irradiation by 145-eV Kr+ ions with a pulse duration of 0.5 s during epitaxy of silicon from a molecular beam is studied experimentally by RHEED. It is found that pulsed irradiation by low-energy ions intensifies the specular reflection. This corresponds to a decrease in the roughness of the growing surface. It is shown that the observed effect depends strongly on the degree of filling of the surface atomic layer, the substrate temperature, and the ion current density.
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Pis’ma Zh. Éksp. Teor. Fiz. 64, No. 10, 689–694 (25 November 1996)
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Dvurechenskii, A.V., Zinov’ev, V.A., Markov, V.A. et al. Effects of pulsed irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam. Jetp Lett. 64, 742–747 (1996). https://doi.org/10.1134/1.567291
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DOI: https://doi.org/10.1134/1.567291