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Wigner crystallization of electrons and holes in amorphous silicon nitride. Antiferromagnetic ordering of localized electrons and holes as a result of a resonance exchange interaction

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Abstract

The predicted quantitative relation between the density and trapping cross section of traps in Si3N4 and the Coulomb repulsion radius in the Wigner crystallization of carriers in localized states is observed experimentally. The absence of ESR for localized electrons and holes in Si3N4 is interpreted on the basis of a model of a resonance exchange interaction of electrons on account of tunneling via localized states.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. A. Gritsenko

  2. Institute of Chemical Kinetics and Combustion, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. D. Milov

Authors
  1. V. A. Gritsenko
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  2. A. D. Milov
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Additional information

Pis’ma Zh. Éksp. Teor. Fiz. 64, No. 7, 489–494 (10 October 1996)

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Gritsenko, V.A., Milov, A.D. Wigner crystallization of electrons and holes in amorphous silicon nitride. Antiferromagnetic ordering of localized electrons and holes as a result of a resonance exchange interaction. Jetp Lett. 64, 531–537 (1996). https://doi.org/10.1134/1.567230

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  • DOI: https://doi.org/10.1134/1.567230

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