Abstract
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
Similar content being viewed by others
References
B. K. Ridley, Rep. Prog. Phys. 54, 169 (1991).
V. Karpus, Fiz. Tekh. Poluprovodn. 22, 439 (1988) [Sov. Phys. Semicond. 22, 268 (1988)].
H. Sakaki, K. Hirakawa, J. Yoshino et al., Surf. Sci. 142, 306 (1984); K. Hirakawa and H. Sakaki, Appl. Phys. Lett. 49, 889 (1986).
M. G. Blyumina, A. G. Denisov, T. A. Polyanskaya et al., JETP Lett. 44, 257 (1986); A. M. Kreschuk, M. Yu. Martisov, T. A. Polyanskaya et al., Solid State Commun. 65, 1189 (1988).
Y. Ma, R. Fletcher, E. Zaremba et al., Phys. Rev. B 43, 9033 (1990).
P. Santhanam, S. Wind, and D. E. Prober, Phys. Rev. B 35, 3188 (1987); A. Mittal, R. G. Wheeler, and D. E. Prober, Surface Science, to be published (1996).
J. F. Ryan, R. A. Taylor, A. J. Turberfield et al., Phys. Rev. Lett. 53, 1841 (1984); W. Potz and P. Kocevar, Phys. Rev. B 28, 7040 (1983).
U. Hohenester, P. Supancic, P. Kocevar et al., Phys. Rev. B 47, 13233 (1993).
J. Lutz, F. Kuchar, K. Ismail et al., Semicond. Sci. Technol. 8, 399 (1993).
D. J. McKitterick, A. Ya. Shik, A. J. Kent et al. Phys. Rev. B 49, 2585 (1994); N. A. Mordovets and I. N. Kotel’nikov, Fiz. Tekh. Poluprovodn. 28, 1960 (1994); I. Maran, W. Seidenbusch, E. Gornik et al., Semicond. Sci. Technol. 9, 700 (1994).
A. A. Verevkin, N. G. Ptitsina, G. M. Chulkova, JETP Lett. 61, 591 (1995); A. A. Verevkin, N. G. Ptitsina, G. M. Chulcova et al., Phys. Rev. B 53, R7592 (1996).
P. J. Price, Surf. Sci. 113, 199 (1982); ibid. 143, 145 (1984).
R. A. Hopfel and G. Weimann, Appl. Phys. Lett. 46, 291 (1985)
Author information
Authors and Affiliations
Additional information
Pis’ma Zh. Éksp. Teor. Fiz. 64, No. 5, 371–375 (10 September 1996)
Rights and permissions
About this article
Cite this article
Verevkin, A.A., Ptitsina, N.G., Smirnov, K.V. et al. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K. Jetp Lett. 64, 404–409 (1996). https://doi.org/10.1134/1.567211
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.567211