Abstract
Magnetoexcitons in InGaAs/GaAs surface quantum wells in a quantizing magnetic field are investigated theoretically and experimentally. Dielectric enhancement of an exciton with decreasing thickness of the barrier layer is demonstrated, and the dependence of the effect on the strength of the magnetic field is analyzed for the 1s and 2s states.
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Pis'ma Zh. Éksp. Teor. Fiz. 64, No. 1, 47–51 (10 July 1996)
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Yablonskii, A.L., Dzyubenko, A.B., Tikhodeev, S.G. et al. Dielectric enhancement of magnetoexcitons in surface quantum wells. Jetp Lett. 64, 51–56 (1996). https://doi.org/10.1134/1.567158
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DOI: https://doi.org/10.1134/1.567158