Abstract
Changes in the photoluminescence spectra and photoelectric phenomena at the transition from layered to three-dimensional growth with the formation of quantum dots were traced in samples with continuously increasing effective thickness of the strained layer.
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Pis’ma Zh. Éksp. Teor. Fiz. 63, No. 6, 418–422 (25 March 1996)
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Zvonkov, B.N., Lin’kova, E.R., Malkina, I.G. et al. Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth. Jetp Lett. 63, 439–443 (1996). https://doi.org/10.1134/1.567045
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DOI: https://doi.org/10.1134/1.567045