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Observation of a shift of the mobility threshold in the D − band of silicon in an electric field according to the photoconductivity spectra

  • Condensed Matter
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Abstract

We have discovered that the extrinsic photoconductivity spectrum of doped, uncompensated crystalline Si at liquid-helium temperatures is qualitatively different in electric fields E above a critical value E c . Specifically, the red edge of the photoconductivity, associated with photoionization of a neutral impurity, is shifted strongly to lower frequencies. This result is explained by the appearance of a mobility threshold in the D −-band (upper Hubbard band) and the shift of this threshold as E increases.

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Authors and Affiliations

  1. Moscow Pedagogical State University, 119882, Moscow, Russia

    A. P. Mel’nikov, Yu. A. Gurvich, L. N. Shestakov & E. M. Gershenzon

Authors
  1. A. P. Mel’nikov
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  2. Yu. A. Gurvich
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  3. L. N. Shestakov
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  4. E. M. Gershenzon
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Additional information

Pis’ma Zh. Éksp. Teor. Fiz. 63, No. 2, 89–94 (25 January 1996)

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Mel’nikov, A.P., Gurvich, Y.A., Shestakov, L.N. et al. Observation of a shift of the mobility threshold in the D − band of silicon in an electric field according to the photoconductivity spectra. Jetp Lett. 63, 100–106 (1996). https://doi.org/10.1134/1.566986

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  • DOI: https://doi.org/10.1134/1.566986

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