Abstract
AbstractThe band structure of cuprates as a doped 2D insulator is modeled assuming that the excess charge carriers are associated with the corresponding substitution atoms, and the phase diagram of the paramagnetic states as a function of the degree x of doping at zero temperature is studied. The Hamiltonian contains electronic correlations on impurity orbitals and hybridization between them and the initial band states of the insulator. It is shown that the change in the electronic structure of a doped compound includes the formation of impurity bands of distributed and localized electronic states in the initial insulator gap. It is established that in the case of one excess electron per substitution atom the spin fluctuations (1) give rise to an insulator state of the doped compound for x < x thr, 1, (2) lead to a superconducting state for x thr, 1 < x < x thr, 2, and (3) decay as x > x thr, 2 increases further, and the doped compound transforms into a paramagnetic state of a “poor” metal with a high density of localized electronic states at the Fermi level.
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 117, No. 1, 2000, pp. 182–195.
Original Russian Text Copyright © 2000 by Agafonov, Manykin.
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Agafonov, A.I., Manykin, É.A. Insulator-superconductor-metal transitions induced by spin fluctuations in the paramagnetic phase of doped insulators. J. Exp. Theor. Phys. 90, 160–172 (2000). https://doi.org/10.1134/1.559087
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DOI: https://doi.org/10.1134/1.559087