Abstract
Using scanning tunneling microscopy, we have detected nonuniform electron states on cleaved bismuth surfaces, which manifest themselves in the form of a random relief with a characteristic lateral size of 1–2 nm and a vertical size of a fraction of an angström. This relief is due to variations in current-voltage characteristics when the tip is moved over the sample surface. Features on the current-voltage characteristics associated with states near the surface have been observed in a voltage range of −0.4 to +0.4 V. The nonuniform states are tentatively associated with defects generated in the process of crystal cleavage.
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Zh. Éksp. Teor. Fiz. 115, 2214–2227 (June 1999)
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Troyanovskii, A.M., Édel’man, V.S. Nonuniform electron states near cleaved bismuth surface. J. Exp. Theor. Phys. 88, 1212–1220 (1999). https://doi.org/10.1134/1.558913
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DOI: https://doi.org/10.1134/1.558913