Abstract
We have developed a numerical technique for calculating inhomogeneous strains in stressed semiconducting nanostructures, such as quantum wires and dots manufactured by nanolithography from stressed InGaAs/GaAs quantum wells. The technique is based on solving a linear problem of elasticity theory by the Green’s function method and presumes a lack of defects and dislocations in nanostructure heterojunctions. Spatial distributions of strain tensor components and shifts of electron and hole potentials in a nanostructure due to the strain have been calculated.
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Zh. Éksp. Teor. Fiz. 115, 1906–1914 (May 1999)
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Gippius, N.A., Tikhodeev, S.G. Inhomogeneous strains in semiconducting nanostructures. J. Exp. Theor. Phys. 88, 1045–1049 (1999). https://doi.org/10.1134/1.558888
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DOI: https://doi.org/10.1134/1.558888