Abstract
Radiation breakdown in silicon slabs is observed and studied as revealed in anomalous behavior of the dose characteristics of their radiation defects when the radiative intensity is varied. A theory is constructed for reversible radiation breakdown due to the bistability which develops in a gas of radiation vacancies when the gas can be regarded as quasi-two-dimensional. In order to explain the exponential saturation of the dose characteristics as the irradiation intensity is increased, scenarios are proposed in which different forms of the constituent radiation defects develop. Some parameters of the bistable gas of primary vacancies are estimated, including diffusion coefficients, dimensions of inhomogeneity regions, and the rate of movement of the stratification line. On the whole, satisfactory agreement with experiment is obtained. Discrepancies between the diffusion coefficient for neutral vacancies obtained here and in the literature are attributed to the role of interband recombination accompanying radiation defect formation during electron bombardment.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Y. H. Lee, J. W. Corbett, and K. L. Brower, Phys. Status Solidi A 41, 637 (1977).
V. V. Emtsev, T. V. Mashovets, and V. V. Mikhnovich, Fiz. Tekh. Poluprovodn. 27, 708 (1993) [Semiconductors 27, 390 (1993)].
A. I. Baranov, N. I. Boyarkina, and A. V. Vasil’ev, Fiz. Tekh. Poluprovodn. 29, 1570 (1995) [Semiconductors 29, 817 (1995)].
E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov et al., Fiz. Tekh. Poluprovodn. 31, 235 (1997) [Semiconductors 31, 127 (1997)].
S. K. Estreicher, J. Weber, A. Derecskei-Kovacs et al., Phys. Rev. B 55, 5037 (1997).
L. D. Landau and E. M. Lifshitz, Fluid Mechanics 2nd ed., Pergamon, New York (1987).
G. D. Watkins, in Deep Centers in Semiconductors, S. T. Pantelides (Ed.), Gordon and Breach, New York (1986), p. 147.
S. E. Mal’khanov, Fiz. Tekh. Poluprovodn. 29, 725 (1995) [Semiconductors 29, 377 (1995)].
G. W. Anderson, M. C. Hanf, P. R. Norton et al., Appl. Phys. Lett. 66, 1123 (1995).
V. N. Bessolov, E. V. Konenkova, M. V. Lebedev et al., in Third All-Russian Conference on the Physics of Semiconductors. Abstracts [in Russian], FIAN, Moscow (1997), p. 304.
G. W. Anderson, P. Ma, and P. R. Norton, J. Appl. Phys. 79, 5641 (1996).
V. V. Yuzhakov, Hsueh-Chia Chang, and A. E. Miller, Phys. Rev. B 56, 12608 (1997).
N. V. Kolesnikov, V. N. Lomasov, and S. E. Mal’khanov, Fiz. Tekh. Poluprovodn. 23, 1921 (1989) [Sov. Phys. Semicond. 23, 1191 (1989)]; Fiz. Tekh. Poluprovodn. 24, 372 (1990) [Sov. Phys. Semicond. 24, 230 (1990)].
N. T. Bagraev, D. E. Onopko, A. I. Ryskin et al., Fiz. Tekh. Poluprovodn. 30, 1855 (1996) [Semiconductors 30, 970 (1996)].
J. Keizer, Statistical Thermodynamics of Nonequilibrium Processes, Springer-Verlag, New York (1987).
I. P. Ipatova, V. G. Malyshkin, A. N. Starodubtsev et al., in Third All-Russian Conference on the Physics of Semiconductors. Abstracts [in Russian], FIAN, Moscow (1997), p. 272.
B. S. Bokshtein, Atoms Wander through a Crystal [in Russian], Nauka, Moscow (1984).
N. P. Kalashnikov, Coherent Interactions of Charged Particles in Single Crystals [in Russian], Atomizdat, Moscow (1981), Ch. 2.
L. D. Landau and E. M. Lifshitz, Quantum Mechanics. Nonrelativistic Theort, 3rd ed., Pergamon, New York (1977), Ch. 6.
L. D. Landau and E. M. Lifshitz, Statistical Physics. Part I [in Russian], Nauka, Moscow (1976).
N. V. Kolesnikov, V. N. Lomasov, S. E. Mal’khanov et al., Fiz. Tekh. Poluprovodn. 18, 1496 (1984) [Sov. Phys. Semicond. 18, 936 (1984)].
S. E. Mal’khanov, Fiz. Tekh. Poluprovodn. 28, 1431 (1994) [Semiconductors 28, 804 (1994)].
V. A. Voitenko and S. E. Mal’khanov, Zh. Éksp. Teor. Fiz. 112, 707 (1997) [JETP 85, 386 (1997)].
J. Ziman, Principles of the Theory of Solids, Cambridge Univ. Press, Cambridge (1974).
A. K. Gutakovskii, L. I. Fedina, A. L. Aseev et al., in Third All-Russian Conference on the Physics of Semiconductors. Abstracts [in Russian], FIAN, Moscow (1997), p. 267.
A. N. Safonov, E. C. Lightowlers, and G. Davies, Phys. Rev. B 56, 15517 (1997).
N. N. Ledentsov, in Proceedings of 23rd International Conference on the Physics of Semiconductors, M. Scheffler and R. Zimmermann (eds.), Vol. 1, World Scientific, Singapore (1996), p. 19.
Author information
Authors and Affiliations
Additional information
Zh. Éksp. Teor. Fiz. 114, 1067–1078 (September 1998)
Rights and permissions
About this article
Cite this article
Voitenko, V.A., Mal’khanov, S.E. Radiation breakdown in silicon wafers. J. Exp. Theor. Phys. 87, 581–587 (1998). https://doi.org/10.1134/1.558696
Received:
Issue Date:
DOI: https://doi.org/10.1134/1.558696