Abstract
The lifetime of charge carriers in the lowest excited states of some impurities of groups III and V in diamond, silicon, and germanium can be several (four to six) orders of magnitude longer that the lifetime of free carriers. Accumulation of carriers in these long-lived states may give rise to several new effects, such as hopping photoconductivity via long-lived excited states of impurities in dc and microwave electric fields, slow relaxation of induced absorption, and infrared absorption at energies lower than the impurity ionization energy.
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Zh. Éksp. Teor. Fiz. 112, 221–236 (July 1997)
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Pokrovskii, Y.E., Smirnova, O.I. & Khvalkovskii, A. Long-lived excited impurity states in diamond-like semiconductors. J. Exp. Theor. Phys. 85, 121–129 (1997). https://doi.org/10.1134/1.558294
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DOI: https://doi.org/10.1134/1.558294