Abstract
A dielectric local mode related to the motion of divacancies in p-silicon has been observed for the first time. The mode manifests itself in Fano-resonance signals in the photoconductivity spectra. We explain the behavior of the corresponding segment in these spectra caused by temperature variations. In light of the new results, we examine the entire set of the experimental facts related to positively charged divacancies: the high values of the cross sections of capture and photoionization of a hole at a single divacancy, the difference in the defect environment of electron and hole silicon, and the quadratic dependence of the concentration of defects containing divacancies on the intensity of the electron flux producing these defects.
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Zh. Éksp. Teor. Fiz. 112, 707–713 (August 1997)
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Voitenko, V.A., Mal’khanov, S.E. Observation of the dielectric local mode related to divacancies in p-silicon. J. Exp. Theor. Phys. 85, 386–389 (1997). https://doi.org/10.1134/1.558288
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DOI: https://doi.org/10.1134/1.558288