Abstract
Scanning tunneling microscopy is applied for the first time to an atomic-resolution investigation of the 4×2 and 4×6 phases on a gallium-rich GaAs(001) surface obtained by molecular-beam epitaxy and migration-enhanced epitaxy. A unified structural model is proposed with consideration of the results of experiments and first-principles calculations of the total energy. In this model the 4×2 phase consists of two Ga dimers in the top layer and a Ga dimer in the third layer, and the 4×6 phase is matched to periodically arranged Ga clusters at the corners of a 4×6 unit cell on top of the 4×2 phase.
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Zh. Éksp. Teor. Fiz. 111, 1858–1868 (May 1997)
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Bakhtizin, R.Z., Xue, Q., Sakurai, T. et al. Atomic structures of gallium-rich GaAs(001)-4×2 and GaAs(001)-4×6 surfaces. J. Exp. Theor. Phys. 84, 1016–1021 (1997). https://doi.org/10.1134/1.558238
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DOI: https://doi.org/10.1134/1.558238