Abstract
Photoreflectance spectra of selectively doped GaAs/AlGaAs heterostructures are studied under the conditions of direct current flow along the structure layers. Using a model developed for the spectra, variations of the internal transverse electric fields are calculated for longitudinal current flow. It is proved experimentally that even a weak heating of electrons in such structures leads to a spatial redistribution of electrons in the direction transverse to the heterostructure layers.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 82, No. 10, 2005, pp. 747–751.
Original Russian Text Copyright © 2005 by Lonskaya, Ryabushkin.
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Lonskaya, E.I., Ryabushkin, O.A. Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow. Jetp Lett. 82, 664–668 (2005). https://doi.org/10.1134/1.2166916
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DOI: https://doi.org/10.1134/1.2166916