Abstract
Thermally activated negative photoconductivity is observed in p-GaAs/Al0.5Ga0.5As:Be heterostructures under illumination with red light at temperatures below 6 K. As the temperature decreases, the concentration and mobility of 2D holes in the quantum well drop sharply, particularly under uniaxial compression. The phenomenon is quantitatively described under the assumption that a layer of deep donor-like traps with a low thermal activation barrier E B = 3.0 ± 0.5 meV exists at a distance of about 7 nm from the heterojunction and that this barrier does not change with strain. Presumably, the traps may be the p-type dopant Be atoms diffusing from the active layer and occupying interstitial positions.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 82, No. 10, 2005, pp. 734–740.
Original Russian Text Copyright © 2005 by Minina, Il’evski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Kraak.
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Minina, N.Y., Il’evskii, A.A. & Kraak, W. Thermally activated negative photoconductivity below 6 K in p-GaAs/Al0.5Ga0.5As heterostructures and the effect of uniaxial compression. Jetp Lett. 82, 652–657 (2005). https://doi.org/10.1134/1.2166914
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DOI: https://doi.org/10.1134/1.2166914