Abstract
The structural properties of MBE-grown GaAs and Al0.3Ga0.7 As nanowhiskers were studied. The formation of wurtzite and 4H-polytype hexagonal structures with characteristic sizes of 100 nm or larger in these materials was demonstrated. It is concluded that the Au-Ga activation alloy symmetry influences the formation of the hexagonal structure.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 12, 2005, pp. 2121–2126.
Original Russian Text Copyright © 2005 by Soshnikov, Cirlin, Tonkikh, Samsonenko, Dubovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Ustinov, Gorbenko, Litvinov, Gerthsen.
An erratum to this article is available at http://dx.doi.org/10.1134/S1063783406020375.
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Soshnikov, I.P., Cirlin, G.É., Tonkikh, A.A. et al. Atomic structure of MBE-grown GaAs nanowhiskers. Phys. Solid State 47, 2213–2218 (2005). https://doi.org/10.1134/1.2142881
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DOI: https://doi.org/10.1134/1.2142881