Abstract
In order to reveal the effects of disorder in the vicinity of the apparent metal-insulator transition in 2D, we studied electron transport in the same Si device after cooling it down to 4 K at different fixed values of the gate voltage V cool. Different V cool did not significantly modify either the momentum relaxation rate or the strength of electron-electron interactions. However, temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields in the vicinity of the 2D metal-insulator transition carry a strong imprint of the quenched disorder determined by V cool. This demonstrates that the observed transition between the metallic and insulating regimes, besides the universal effects of electron-electron interaction, depends on the sample-specific localized states (disorder). We report on evidence for a weak exchange of electrons between the reservoirs of extended and resonant localized states that occur at low densities. The strong cool-down dependent variations of ρ(T), we believe, are evidence for a developing spatially inhomogeneous state in the critical regime.
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From Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, Vol. 82, No. 6, 2005, pp. 412–417.
Original English Text Copyright © 2005 by Pudalov, Gershenson, Klimov, Kojima.
The text was submitted by the authors in English.
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Pudalov, V.M., Gershenson, M.E., Klimov, N.N. et al. Quenched disorder effects in electron transport in Si inversion layers in the dilute regime. Jetp Lett. 82, 371–376 (2005). https://doi.org/10.1134/1.2137375
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DOI: https://doi.org/10.1134/1.2137375