Abstract
Oriented GaN layers with a thickness of about 10 μm have been grown by hydride-chloride vaporphase epitaxy (HVPE) on Si(111) substrates with AlN buffer layers. The best samples are characterized by a halfwidth (FWHM) of the X-ray rocking curve of ωθ = 3–4 mrad. The level of residual mechanical stresses in AlN buffer layers decreases with increasing temperature of epitaxial growth. The growth at 1080°C is accompanied by virtually complete relaxation of stresses caused by the lattice mismatch between AlN and Si.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 31, No. 21, 2005, pp. 30–36.
Original Russian Text Copyright © 2005 by Bessolov, Davydov, Zhilyaev, Konenkova, Mosina, Raevski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Rodin, Sharofidinov, Shcheglov, Hee Seok Park, Masayoshi Koike.
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Bessolov, V.N., Davydov, V.Y., Zhilyaev, Y.V. et al. GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers. Tech. Phys. Lett. 31, 915–918 (2005). https://doi.org/10.1134/1.2136951
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DOI: https://doi.org/10.1134/1.2136951