Abstract
The regularities of the defect formation in Si1−x Gex/Si heterostructures (x = 0.15 and 0.30), consisting of a low-temperature Si buffer layer and a SiGe solid solution, during their growth and subsequent annealings at temperatures 550–650°C are investigated by the methods of optical and transmission electron microscopy and X-ray diffraction. It is shown that the misfit-strain relaxation by plastic deformation under the conditions studied occurs most intensively in heterostructures with low-temperature SiGe buffer layers. The maximum degree of misfit-strain relaxation (no higher than 45%) is observed in the heterostructures with x = 0.30 after annealing at 650°C. The results obtained are explained by the effect of the nature and concentration of dislocation-nucleation centers, existing in low-temperature buffer layers, on the characteristics of the formation of a dislocation structure in the heterostructures under consideration.
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Translated from Kristallografiya, Vol. 50, No. 6, 2005, pp. 1099–1106.
Original Russian Text Copyright © 2005 by Yugova, Mil’vidski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Rzaev, Schäffler.
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Yugova, T.G., Mil’vidskii, M.G., Rzaev, M.M. et al. Thermally stimulated relaxation of misfit strains in Si1−x Gex/Si(100) heterostructures with different buffer layers. Crystallogr. Rep. 50, 1020–1026 (2005). https://doi.org/10.1134/1.2132412
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DOI: https://doi.org/10.1134/1.2132412