Abstract
An analysis of general characteristics of light-induced forces is presented for arbitrary monochromatic masks in which optical pumping of atoms and spontaneous emission play an important role. Dependence of regions of localization on detuning and ellipticity is determined for cyclic transitions of two types: J å J with half-integer J and J å J + 1 with arbitrary J. Numerical simulations of atomic beam focusing with one-and two-dimensional light masks show that spatial atom distributions with narrow features and high contrast can be formed in dissipative masks. In particular, spherical aberration is substantially reduced when the pumping field is tuned to a J å J + 1 transition with large J in lin ∼ lin configuration as compared to nondissipative masks.
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Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 128, No. 4, 2005, pp. 682–697.
Original Russian Text Copyright © 2005 by Bezverbnyi, Prudnikov, Taichenachev, Tumaikin, Yudin.
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Bezverbnyi, A.V., Prudnikov, O.N., Taichenachev, A.V. et al. Steady-state light-induced forces in atomic nanolithography. J. Exp. Theor. Phys. 101, 584–596 (2005). https://doi.org/10.1134/1.2131927
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DOI: https://doi.org/10.1134/1.2131927