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Effect of an electric field on the carrier collection efficiency of InAs quantum dots

  • Low-Dimensional Systems and Surface Physics
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Abstract

Individual and multiquantum dots of InAs are studied by means of microphotoluminescence in the case where, in addition to the principal laser exciting photoluminescence, second infrared laser is used. It is demonstrated that the absorption of the infrared photons effectively creates free holes in the sample, which leads to both a change in the charge state of a quantum dot and to a considerable reduction of their photoluminescence signal. The latter effect is explained in terms of effective screening of the internal electric field, facilitating carrier transport along the plane of a wetting layer, by the surplus holes from the infrared laser. It is shown that the effect of quenching of quantum dot photoluminescence gradually disappears at increased sample temperature (T) and/or dot density. This fact is due to the essentially increased value of quantum dot collection efficiency, which could be achieved at elevated sample temperatures for individual quantum dots or even at low T for the case of multiquantum dots. It is suggested that the observed phenomena can be widely used in practice to effectively manipulate the collection efficiency and the charge state of quantum-dot-based optical devices.

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Authors and Affiliations

  1. Department of Physics and Measurement Technology, Linköping University, Linköping, S-58183, Sweden

    E. S. Moskalenko, K. F. Karlsson & P. O. Holtz

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    E. S. Moskalenko

  3. Faculty of Physics, Sofia University, Sofia, 1164, Bulgaria

    V. Donchev

  4. Department of Materials, University of California, Santa Barbara, California, 93106, USA

    W. V. Schoenfeld & P. M. Petroff

Authors
  1. E. S. Moskalenko
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  2. K. F. Karlsson
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  3. V. Donchev
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  4. P. O. Holtz
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  5. W. V. Schoenfeld
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  6. P. M. Petroff
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Additional information

From Fizika Tverdogo Tela, Vol. 47, No. 11, 2005, pp. 2066–2073.

Original English Text Copyright © 2005 by Moskalenko, Karlsson, Donchev, Holtz, Schoenfeld, Petroff.

This article was submitted by the authors in English.

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Moskalenko, E.S., Karlsson, K.F., Donchev, V. et al. Effect of an electric field on the carrier collection efficiency of InAs quantum dots. Phys. Solid State 47, 2154–2161 (2005). https://doi.org/10.1134/1.2131162

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  • DOI: https://doi.org/10.1134/1.2131162

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