Abstract
A model is proposed for a photoinduced Peierls-type semiconductor-metal phase transition that makes it possible to determine the time dependence of the bandgap width in the electronic spectrum of vanadium dioxide subjected to a light field and the dependence of the time at which a photoinduced semiconductor-metal phase transition occurs on the laser pulse duration. The theoretical results obtained are consistent with experimental data on the illumination of a VO2 film with an intense laser pulse.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 11, 2005, pp. 2053–2055.
Original Russian Text Copyright © 2005 by Semenov.
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Semenov, A.L. Ultrafast semiconductor-metal phase transition in vanadium dioxide induced by a femtosecond laser pulse. Phys. Solid State 47, 2141–2143 (2005). https://doi.org/10.1134/1.2131159
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DOI: https://doi.org/10.1134/1.2131159