Abstract
The distribution of defects in dislocation tracks in silicon plates was studied for various indentation angles. The regularities of variations in the linear density and maximum path of dislocations in slip bands are established. A model is proposed to describe the distribution of dislocations in the dislocation tracks. By fitting the theory to the experimental data, the dependence of this distribution on the energy relaxation time is determined.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 11, 2005, pp. 1967–1972.
Original Russian Text Copyright © 2005 by Orlov, Solov’ev, Skvortsov, Yavtushenko.
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Orlov, A.M., Solov’ev, A.A., Skvortsov, A.A. et al. Redistribution of dislocations in silicon near stress concentrators. Phys. Solid State 47, 2049–2054 (2005). https://doi.org/10.1134/1.2131143
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DOI: https://doi.org/10.1134/1.2131143