Abstract
Raman spectroscopy is employed for studying silicon nanocrystal arrays in boron-doped amorphous silicon films. The nanocrystals were formed in the initial amorphous films by the pulsed impact of an excimer laser. The electron-phonon interaction effects are observed experimentally in the heterostructure formed by a silicon nanocrystal and an amorphous matrix. These effects can be described in the framework of the familiar Fano interference model.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 82, No. 2, 2005, pp. 91–94.
Original Russian Text Copyright © 2005 by Volodin, Efremov.
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Volodin, V.A., Efremov, M.D. Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum. Jetp Lett. 82, 86–88 (2005). https://doi.org/10.1134/1.2056633
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DOI: https://doi.org/10.1134/1.2056633