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IR absorption by free charge carriers with the participation of optical phonons in structures with quantum wells

  • Low-Dimensional Systems and Surface Physics
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Abstract

The absorption of light by free charge carriers with the participation of surface and bulk optical phonons is considered in terms of the Boltzmann statistics and Pekar-Fröhlich Hamiltonian for the electron-photon interaction in a polar semiconductor layer within the framework of the model of a rectangular quantum well. It is found that the contributions of the surface and bulk modes to the probability of light absorption depend on the quantum-well width. It is demonstrated that the line of the photon-phonon resonance has a complex structure due to the difference between the frequencies of the bulk and surface optical vibrations. The influence of the adjacent media on the coefficient of light absorption is investigated.

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Authors and Affiliations

  1. Shevchenko Pridnestrovskii State University, ul. Dvadtsat’ Pyatogo Oktyabrya 128, Tiraspol, 3300, Moldova

    S. I. Beril, S. M. Sokovnich & A. S. Starchuk

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  1. S. I. Beril
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  2. S. M. Sokovnich
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  3. A. S. Starchuk
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 9, 2005, pp. 1698–1703.

Original Russian Text Copyright © 2005 by Beril, Sokovnich, Starchuk.

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Beril, S.I., Sokovnich, S.M. & Starchuk, A.S. IR absorption by free charge carriers with the participation of optical phonons in structures with quantum wells. Phys. Solid State 47, 1764–1770 (2005). https://doi.org/10.1134/1.2045365

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