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Formation of clusters and the magnetooptical Kerr effect in gallium arsenide implanted with manganese ions

  • Semiconductors and Dielectrics
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Abstract

The surface morphology and magnetic properties of GaAs irradiated by manganese ions are studied at room temperature using atomic-force microscopy and the magnetooptical Kerr effect. It is shown that ferromagnetism takes place in the surface layer of the irradiated semiconductor subjected to annealing at 715–750°C. The magnetic properties of this layer are related to the evolution of submicron clusters in GaAs doped with Mn.

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Authors and Affiliations

  1. Physicotechnical Research Institute, Lobachevskii Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    Yu. A. Danilov

  2. Lobachevskii Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    A. V. Kruglov

  3. Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, 91501-970, Brazil

    M. Behar, M. C. dos Santos, L. G. Pereira & J. E. Schmidt

Authors
  1. Yu. A. Danilov
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  2. A. V. Kruglov
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  3. M. Behar
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  4. M. C. dos Santos
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  5. L. G. Pereira
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  6. J. E. Schmidt
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 9, 2005, pp. 1567–1570.

Original Russian Text Copyright © 2005 by Danilov, Kruglov, Behar, Santos, Pereira, Schmidt.

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Danilov, Y.A., Kruglov, A.V., Behar, M. et al. Formation of clusters and the magnetooptical Kerr effect in gallium arsenide implanted with manganese ions. Phys. Solid State 47, 1626–1629 (2005). https://doi.org/10.1134/1.2045344

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  • DOI: https://doi.org/10.1134/1.2045344

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