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Formation of higher manganese silicide films on silicon

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Abstract

The formation of higher manganese silicide (HMS) films on silicon and the properties of the silicide-silicon interface are studied. Morphology analysis of the surface and thin transition layer at the HMS-Si interface suggests that the growth of HMS films by the method of Mn reactive diffusion follows the vapor-liquid-crystal mechanism.

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Authors and Affiliations

  1. Tashkent State Aviation Institute, Tashkent, 700047, Uzbekistan

    T. S. Kamilov, D. K. Kabilov, I. S. Samiev & Kh. Kh. Khusnutdinova

  2. Physicotechnical Institute, Physics-Sun Research and Production Corporation, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

    R. A. Muminov

  3. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 117333, Russia

    V. V. Klechkovskaya

Authors
  1. T. S. Kamilov
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  2. D. K. Kabilov
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  3. I. S. Samiev
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  4. Kh. Kh. Khusnutdinova
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  5. R. A. Muminov
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  6. V. V. Klechkovskaya
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 75, No. 8, 2005, pp. 140–142.

Original Russian Text Copyright © 2005 by Kamilov, Kabilov, Samiev, Khusnutdinova, Muminov, Klechkovskaya.

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Kamilov, T.S., Kabilov, D.K., Samiev, I.S. et al. Formation of higher manganese silicide films on silicon. Tech. Phys. 50, 1102–1104 (2005). https://doi.org/10.1134/1.2014547

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  • DOI: https://doi.org/10.1134/1.2014547

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