Abstract
The design and production technology of monolithic planar GaAs p-i-n diode limiters for the microwave wavelength range are described. The limiter provides protection of receiving equipment in radar systems at an input signal power up to 100–200 W. The transmission losses do not exceed 1 dB, while the level of damping introduced in the limitation regime is 16–18 dB.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 14, 2005, pp. 62–66.
Original Russian Text Copyright © 2005 by Volkov, Ivanova, Kuz’michev, Solov’ev.
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Volkov, V.V., Ivanova, V.P., Kuz’michev, Y.S. et al. Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range. Tech. Phys. Lett. 31, 611–612 (2005). https://doi.org/10.1134/1.2001070
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DOI: https://doi.org/10.1134/1.2001070