Abstract
We have numerically modeled the ac current passage through a Si-SiO2-VO2 structure, which is known to exhibit switching with an S-like characteristic due to a metal-semiconductor phase transition in vanadium dioxide. It is shown that the dynamics of switching at high frequencies (105–109 Hz) can be effectively controlled, which makes such structures promising elements for use in high-frequency microelectronics as analogs of thyristors and photothyristors.
Similar content being viewed by others
References
A. A. Bugaev, B. P. Zakharchenya, and F. A. Chudnovskii, Semiconductor-Metal Phase Transition and Its Applications (Nauka, Leningrad, 1979) [in Russian].
P. P. Boriskov, A. A. Velichko, A. L. Pergament, et al., Pis’ma Zh. Tekh. Fiz. 28(10), 13 (2002) [Tech. Phys. Lett. 28, 406 (2002)].
A. A. Velichko, N. A. Kuldin, G. B. Stefanovich, et al., Pis’ma Zh. Tekh. Fiz. 29(12), 49 (2003) [Tech. Phys. Lett. 29, 507 (2003)].
N. A. Kuldin and A. A. Velichko, Usp. Sovrem. Estestv. 4, 44 (2004).
A. Cavalleri, C. Toth, C. Siders, et al., Phys. Rev. Lett. 87, 237401 (2001).
Yu. S. Ochan, Methods of Mathematical Physics (Vysshaya Shkola, Moscow, 1965) [in Russian].
The Oxide Handbook, Ed. by G. V. Samsonov, 2nd ed. (Metallurgiya, Moscow, 1978; Plenum Press, New York, 1982).
G. Stefanovich, A. Pergament, and D. Stefanovich, J. Phys.: Condens. Matter 12, 8837 (2000).
S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Vol. 1.
G. Stefanovich, A. Pergament, A. Velichko, et al., J. Phys.: Condens. Matter 16, 4013 (2004).
Author information
Authors and Affiliations
Additional information
__________
Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 31, No. 12, 2005, pp. 63–70.
Original Russian Text Copyright © 2005 by Kuldin, Velichko, Pergament, Stefanovich, Boriskov.
Rights and permissions
About this article
Cite this article
Kuldin, N.A., Velichko, A.A., Pergament, A.L. et al. Numerical modeling of the electrical properties of Si-SiO2-VO2 structures. Tech. Phys. Lett. 31, 520–523 (2005). https://doi.org/10.1134/1.1969787
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1969787