Abstract
For a 2D electron system in silicon, the temperature dependence of the Hall resistance ρxy(T) is measured in a weak magnetic field in the range of temperatures (1–35 K) and carrier concentrations n where the diagonal resistance component exhibits a metallic-type behavior. The temperature dependences ρxy(T) obtained for different n values are nonmonotonic and have a maximum at T max ∼ 0.16T F. At lower temperatures T < T max, the change δρxy(T) in the Hall resistance noticeably exceeds the interaction quantum correction and qualitatively agrees with the semiclassical model, where only the broadening of the Fermi distribution is taken into account. At higher temperatures T > T max, the dependence ρxy(T) can be qualitatively explained by both the temperature dependence of the scattering time and the thermal activation of carriers from the band of localized states.
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Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 81, No. 8, 2005, pp. 502–506.
Original Russian Text Copyright © 2005 by Kuntsevich, Knyazev, Kozub, Pudalov, Brunthaler, Bauer.
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Kuntsevich, A.Y., Knyazev, D.A., Kozub, V.I. et al. Nonmonotonic temperature dependence of the Hall resistance of a 2D electron system in silicon. Jetp Lett. 81, 409–412 (2005). https://doi.org/10.1134/1.1951019
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DOI: https://doi.org/10.1134/1.1951019