Abstract
A method for modeling unit cells of layered structures containing stacking faults is considered by the example of silicon carbide. A rotating-crystal pattern is calculated by the proposed method for silicon carbide with pseudorandom violation of the sequence of close-packed layers. The results of the calculation show that the intensity and shape of reflections of an X-ray diffraction pattern of a layered structure is determined by the configuration of stacking faults.
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Translated from Kristallografiya, Vol. 50, No. 3, 2005, pp. 468–471.
Original Russian Text Copyright © 2005 by Popenko.
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Popenko, V.A. Modeling of layered structures with stacking faults. Crystallogr. Rep. 50, 423–426 (2005). https://doi.org/10.1134/1.1927603
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DOI: https://doi.org/10.1134/1.1927603