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Luminescence intensity monitoring in a MOS tunnel structure with inhomogeneous thickness of the insulator

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Abstract

The electroluminescence (EL) time series in a metal-oxide-semiconductor tunnel structure of the Al/SiO2/p-Si type have been measured. It is demonstrated that analysis of the EL curves in some cases provides more correct information about the state of the oxide layer as compared to that obtained from the results of electric current monitoring.

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References

  1. R. Degraeve, in Proceedings of the 9th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Leuven, 1998.

  2. M. Houssa, N. Vandewalle, T. Nigam, et al., Tech. Dig. Int. Electron Devices Meet., 909 (1998).

  3. A. F. Shulekin, S. E. Tyaginov, R. Khlil, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 753 (2004) [Semiconductors 38, 724 (2004)].

    Google Scholar 

  4. E. Cartier, J. C. Tsang, M. V. Fischetti, and D. A. Buchanan, Microelectron. Eng. 36, 106 (1997).

    Article  Google Scholar 

  5. N. Asli, M. I. Vexler, A. F. Shulekin, and P. Seegebrecht, Semicond. Sci. Technol. 18, 147 (2003).

    Article  ADS  Google Scholar 

  6. H. S. Momose, S. Nakamura, T. Ohguro, et al., IEEE Trans. Electron Devices 45, 691 (1998).

    Article  Google Scholar 

  7. N. Asli, PhD Thesis (Kiel Univ., Kiel, 2004).

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. E. Tyaginov, M. I. Vexler, A. F. Shulekin & I. V. Grekhov

  2. Lehrstuhl für Halbleitertechnik, Technische Fakultät der Universität Kiel, D-24143, Kiel, Germany

    N. Asli & P. Seegebrecht

Authors
  1. S. E. Tyaginov
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  2. N. Asli
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  3. M. I. Vexler
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  4. A. F. Shulekin
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  5. P. Seegebrecht
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  6. I. V. Grekhov
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Additional information

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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 8, 2005, pp. 47–51.

Original Russian Text Copyright © 2005 by Tyaginov, Asli, Vexler, Shulekin, Seegebrecht, Grekhov.

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Tyaginov, S.E., Asli, N., Vexler, M.I. et al. Luminescence intensity monitoring in a MOS tunnel structure with inhomogeneous thickness of the insulator. Tech. Phys. Lett. 31, 336–338 (2005). https://doi.org/10.1134/1.1920389

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  • DOI: https://doi.org/10.1134/1.1920389

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