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Modification of the near-surface layer of n-Si by hydrogen ions in a high-voltage pulsed beam discharge

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Abstract

The near-surface layer of n-Si single crystal wafers has been subjected to microdoping by hydrogen ions in the plasma of a pulsed beam discharge. The resistivity and the current density of the samples have been studied as functions of the hydrogen treatment time. The hydrogen-modified n-Si samples exhibit photo emf. The results are interpreted within the framework of a qualitative model.

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Authors and Affiliations

  1. Tomsk State University, Tomsk, 634050, Russia

    V. P. Demkin

  2. Institute of Strength Physics and Materials Science, Siberian Division, Russian Academy of Sciences, Tomsk, 634055, Russia

    S. V. Mel’nichuk & B. S. Semukhin

Authors
  1. V. P. Demkin
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  2. S. V. Mel’nichuk
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  3. B. S. Semukhin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 7, 2005, pp. 56–62.

Original Russian Text Copyright © 2005 by Demkin, Mel’nichuk, Semukhin.

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Demkin, V.P., Mel’nichuk, S.V. & Semukhin, B.S. Modification of the near-surface layer of n-Si by hydrogen ions in a high-voltage pulsed beam discharge. Tech. Phys. Lett. 31, 295–297 (2005). https://doi.org/10.1134/1.1920376

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  • DOI: https://doi.org/10.1134/1.1920376

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