Abstract
The influence of hydrogen and nitrogen as carrier gases on the rates of gallium nitride (GaN) growth and etching in the process of metalorganic vapor phase epitaxy (MOVPE) have been studied. Based on these data, the possible roles of hydrogen and nitrogen in the events on the surface of an epitaxial GaN layer are considered.
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 7, 2005, pp. 51–55.
Original Russian Text Copyright © 2005 by Lundin, Zavarin, Sizov.
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Lundin, W.V., Zavarin, E.E. & Sizov, D.S. Influence of the carrier gas composition on metalorganic vapor phase epitaxy of gallium nitride. Tech. Phys. Lett. 31, 293–294 (2005). https://doi.org/10.1134/1.1920375
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DOI: https://doi.org/10.1134/1.1920375