Skip to main content
SpringerLink
Log in

The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

We have studied the effect of γ radiation on the generation characteristics of a silicon-silicon dioxide (Si-SiO2) interface formed upon thermal oxidation of the surface of silicon. The irradiation leads to the appearance of a temperature dependence of the surface generation velocity. This effect is related to the formation of radiation-induced traps capable of exchanging trapped carriers with the bulk of a semiconductor by means of tunneling emission.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V. G. Litovchenko and A. P. Gorban’, Principles of the Physics of Metal-Insulator-Semiconductor Structures for Microelectronics (Naukova Dumka, Kiev, 1978) [in Russian].

    Google Scholar 

  2. M. Zerbst, Z. Angew. Phys. 22, 3039 (1966).

    Google Scholar 

  3. S. I. Kang and D. K. Schroder, Phys. Status Solidi A 89, 13 (1985).

    Google Scholar 

  4. S. I. Vlasov, P. B. Parchinskii, and L. G. Ligai, Mikroélektronika 32, 121 (2003).

    Google Scholar 

  5. P. B. Parchinskii, S. I. Vlasov, R. A. Muminov, et al., Pis’ma Zh. Tekh. Fiz. 26(10), 40 (2000) [Tech. Phys. Lett. 26, 420 (2000)].

    Google Scholar 

  6. L. S. Berman and A. A. Lebedev, Deep Level Transient Spectroscopy in Semiconductors (Nauka, Leningrad, 1981) [in Russian].

    Google Scholar 

  7. V. S. Pershenkov, V. D. Popov, and A. V. Shal’nov, Surface Radiation Effects in Integrated Circuits (Énergoatomizdat, Moscow, 1988) [in Russian].

    Google Scholar 

  8. E. I. Gol’dman and A. G. Zhdan, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 428 (1995) [Semiconductors 29, 219 (1995)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National University of Uzbekistan, Tashkent, Uzbekistan

    P. B. Parchinskii, L. G. Ligai, Kh. Zh. Mansurov & Sh. Kh. Iulchiev

Authors
  1. P. B. Parchinskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. G. Ligai
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Kh. Zh. Mansurov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Sh. Kh. Iulchiev
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 7, 2005, pp. 40–44.

Original Russian Text Copyright © 2005 by Parchinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Liga\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Mansurov, Iulchiev.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Parchinskii, P.B., Ligai, L.G., Mansurov, K.Z. et al. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface. Tech. Phys. Lett. 31, 288–289 (2005). https://doi.org/10.1134/1.1920373

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1920373

Keywords

Search

Navigation