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Thermal correction to resistivity in dilute Si-MOSFET two-dimensional systems

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Abstract

Neglecting electron-electron interactions and quantum interference effects, we calculate the classical resistivity of a two-dimensional electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be a universal function of the temperature, expressed in units of (h/e 2)(k F l)−1. Analysis of the compressibility and thermopower points to the thermodynamic nature of the metal-insulator transition in two-dimensional systems. We reproduce the beating pattern of Shubnikov-de Haas oscillations in both the crossed field configuration and Si-MOSFET valley splitting cases. The consequences of the integer quantum Hall effect in a dilute Si-MOSFET two-dimensional electron gas are discussed. The giant parallel magnetoresistivity is argued to result from the magnetic-field-driven disorder.

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Authors and Affiliations

  1. Ioffe Institute for Physics and Technology, St. Petersburg, 194021, Russia

    M. V. Cheremisin

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  1. M. V. Cheremisin
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From Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 127, No. 3, 2005, pp. 674–685.

Original English Text Copyright © 2005 by Cheremisin.

This article was submitted by author in English.

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Cheremisin, M.V. Thermal correction to resistivity in dilute Si-MOSFET two-dimensional systems. J. Exp. Theor. Phys. 100, 597–607 (2005). https://doi.org/10.1134/1.1901771

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  • DOI: https://doi.org/10.1134/1.1901771

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