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Controlling the Josephson contact parameters in a semiconductor-superconductor eutectic composition

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Abstract

The current-voltage (I–U) curve was studied for the Josephson contact in a GaSb-V2Ga5 eutectic composition comprising parallel whiskers of a superconducting V2Ga5 phase formed by oriented crystallization in a semiconducting GaSb matrix. It is established that the parameters of the I-U curve can be controlled by varying the angle between the direction of electric current and the axis of whisker orientation. Using the Josephson relation hω=2eV and considering the parallel connection of infinite Josephson clusters in the structure studied, a formula is derived, n 0 Nhω=2eV, which can be used for estimating the electromagnetic radiation frequency ω of the Josephson weak links, the number N of infinite Josephson clusters, and the number n0N of Josephson weak links in the semiconductor-superconductor eutectic compositions obtained by means of oriented crystallization.

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  1. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

    G. I. Isakov

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  1. G. I. Isakov
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__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 31, No. 5, 2005, pp. 67–75.

Original Russian Text Copyright © 2005 by Isakov.

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Isakov, G.I. Controlling the Josephson contact parameters in a semiconductor-superconductor eutectic composition. Tech. Phys. Lett. 31, 208–211 (2005). https://doi.org/10.1134/1.1894434

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