Abstract
The influence of a gas atmosphere (O2 or air) on the transverse photovoltage (TPV) induced by X-ray irradiation in CdI2 specimens is studied. It is shown that the TPV measured at 295 K in a vacuum grows almost linearly with X-ray dose rate R. In a gas atmosphere, the TPV is of opposite sign and tends to saturation when R exceeds 200 R/min. After evacuation of the system, the TPV value increases, attains a maximum, and then abruptly drops (changing sign) to the initial “vacuum” value. Based on the results of this study and published data, it is shown that such behavior of the TPV in CdI2 is related to X-ray-stimulated chemisorption proceeding by the acceptor mechanism.
References
A. E. Toropov, I. A. Vasilev, and A. F. Nechaev, Radiation Induced Phenomena in Solid: Institute Collection of Scientific Works (UPI im. S. M. Kirova, Sverdlovsk, 1979), No. 1, pp. 54–61 [in Russian].
V. V. Golovanov, V. V. Serdyuk, L. E. Stys, et al., Ukr. Fiz. Zh. 33, 390 (1988).
V. D. Bondar’, A. B. Lyskovich, I. M. Matviishyn, and S. B. Kharambura, Izv. Akad. Nauk SSSR, Neorg. Mater. 26, 660 (1990).
I. M. Matviishyn, V. D. Bondar’, and A. B. Lyskovich, Vestn. L’vovsk. Univ., Ser. Fiz., No. 23, 27 (1990).
V. D. Bondar’, A. B. Lyskovich, I. M. Matviishyn, and S. B. Kharambura, in Proceedings of the 12th All-Union Conference on Physics of Semiconductors, Kiev, 1990, Chap. 2, p. 112.
Wide-Band Layered Crystals and Their Physical Properties, Ed. by A. B. Lyskovich (Vishcha Shkola, Lvov, 1982) [in Russian].
Fundamentals of Semiconductor Electronics, Ed. by O. V. Snitko (Naukova Dumka, Kiev, 1985) in Russian].
B. M. Kostyuk, A. B. Lyskovich, I. M. Matviishyn, and S. S. Novosad, Funct. Mater. 7, 220 (2000).
M. A. Magomedov, Kh. A. Magomedov, M. A. Rizakhanov, and G. M. Gasanbekov, in Proceedings of the 5th All-Union Conference on Physics and Technical Applications of Semiconductors, Vil’nyus, 1983, Vol. 1, pp. 81–82.
V. G. Baru and F. F. Vol’kenshtein, Effect of Radiation on Surface Properties of Semiconductors Nauka, Moscow, 1978) [in Russian].
F. F. Vol’kenshtein, Electronic Processes on Semiconductor Surface at Chemisorption (Nauka, Moscow, 1987) [in Russian].
V. A. Sokolov and A. N. Gorban’, Luminescence and Adsorption (Nauka, Moscow, 1969) [in Russian].
G. P. Peka, Physical Phenomena on Semiconductor Surface (Vishcha Shkola, Kiev, 1984) [in Russian].
A. P. Akhoyan, N. E. Korsunskaya, and I. V. Markevich, Ukr. Fiz. Zh. 33, 827 (1988).
Author information
Authors and Affiliations
Additional information
__________
Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 75, No. 2, 2005, pp. 121–123.
Original Russian Text Copyright © 2005 by Matviishyn, S. Novosad, I. Novosad.
Rights and permissions
About this article
Cite this article
Matviishyn, M., Novosad, S.S. & Novosad, I.S. Influence of adsorption on the transverse photovoltage arising in cadmium diiodide crystals under X-ray irradiation. Tech. Phys. 50, 259–261 (2005). https://doi.org/10.1134/1.1866444
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1866444