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Effect of electron-electron interaction on spin relaxation of charge carriers in semiconductors

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Abstract

An analysis of spin dynamics is presented for semiconductor systems without inversion symmetry that exhibit spin splitting. It is shown that electron-electron interaction reduces the rate of the Dyakonov-Perel (precession) mechanism of spin relaxation both via spin mixing in the momentum space and via the Hartree-Fock exchange interaction in spin-polarized electron gas. The change in the Hartree-Fock contribution with increasing nonequilibrium spin polarization is analyzed. Theoretical predictions are compared with experimental results on spin dynamics in GaAs/AlGaAs-based quantum-well structures. The effect of electron-electron collisions is examined not only for two-dimensional electron gas in a quantum well, but also for electron gas in a bulk semiconductor and a quantum wire.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. M. Glazov & E. L. Ivchenko

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  1. M. M. Glazov
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  2. E. L. Ivchenko
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__________

Translated from Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 126, No. 6, 2004, pp. 1465–1478.

Original Russian Text Copyright © 2004 by Glazov, Ivchenko.

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Glazov, M.M., Ivchenko, E.L. Effect of electron-electron interaction on spin relaxation of charge carriers in semiconductors. J. Exp. Theor. Phys. 99, 1279–1290 (2004). https://doi.org/10.1134/1.1854815

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