Abstract
The electroluminescence (EL) of p +-Si/n-Si: Er/n +-Si light-emitting diode structures in which a thin lightly doped n-Si: Er layer (N D ∼ 1016 cm−3) is sandwiched between heavily doped silicon layers is studied. It is shown that the Er3+ ion EL intensity reaches a maximum in structures operating in a regime of mixed-type breakdown in the space-charge region. The dark-region width is determined (d dark ∼ 0.015–0.020 μm) within which the electrons attain an energy sufficient to excite Er3+ ions.
Similar content being viewed by others
References
G. Franzo, F. Priolo, S. Coffa, A. Polman, and A. Carnera, Appl. Phys. Lett. 64(17), 2235 (1994).
N. A. Sobolev, A. M. Emel’yanov, and K. F. Shtel’makh, Appl. Phys. Lett. 71(14), 1930 (1997).
V. B. Shmagin, D. Yu. Remizov, Z. F. Krasil’nik, V. P. Kuznetsov, V. N. Shabanov, L. V. Krasil’nikova, D. I. Kryzhkov, and M. N. Drozdov, Fiz. Tverd. Tela (St. Petersburg) 46(1), 110 (2004) [Phys. Solid State 46, 109 (2004)].
S. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981; Mir, Moscow, 1984), Chap. 1.
V. P. Kuznetsov and R. A. Rubtsova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34(5), 519 (2000) [Semiconductors 34, 502 (2000)].
E. N. Morozova, V. B. Shmagin, Z. F. Krasil’nik, A. V. Antonov, V. P. Kuznetsov, and R. A. Rubtsova, Izv. Ross. Akad. Nauk, Ser. Fiz. 67(2), 283 (2003).
V. I. Gaman, Physics of Semiconductor Devices (Tomsk. Gos. Univ., Tomsk, 1989) [in Russian].
M. Markmann, E. Neufeld, A. Sticht, K. Brunner, and G. Abstreiter, Appl. Phys. Lett. 78(2), 210 (2001).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 120–123.
Original Russian Text Copyright © 2005 by Shmagin, Remizov, Obolenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Kryzhkov, Drozdov, Krasil’nik.
Rights and permissions
About this article
Cite this article
Shmagin, V.B., Remizov, D.Y., Obolenskii, S.V. et al. Er3+ ion electroluminescence of p +-Si/n-Si: Er/n +-Si diode structure under breakdown conditions. Phys. Solid State 47, 125–128 (2005). https://doi.org/10.1134/1.1853461
Issue Date:
DOI: https://doi.org/10.1134/1.1853461