Abstract
A series of Si: Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5 μm under conditions of p-n junction breakdown at room temperature. The effective cross section of excitation of Er3+ ions with hot carriers heated by the electric field of a reverse-biased p-n junction and the lifetime of Er3+ ions in the first excited state 4 I 13/2 are determined for structures that emit in a mixed breakdown mode and are characterized by the maximum intensity and excitation efficiency of the Er3+ electroluminescence.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. P. Kuznetsov and R. A. Rubtsova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 519 (2000) [Semiconductors 34, 502 (2000)].
B. Andreev, V. Chalkov, O. Gusev, A. Emel’yanov, Z. Krasil’nik, V. Kuznetsov, P. Pak, V. Shabanov, V. Shengurov, V. Shmagin, N. Sobolev, M. Stepikhova, and S. Svetlov, Nanotechnology 13(1), 97 (2002).
Z. F. Krasil’nik, V. Ya. Aleshkin, B. A. Andreev, O. B. Gusev, W. Jantsch, L. V. Krasilnikova, D. I. Kryzhkov, V. P. Kuznetsov, V. G. Shengurov, V. B. Shmagin, N. A. Sobolev, M. V. Stepikhova, and A. N. Yablonsky, in Towards the First Silicon Laser, Ed. by L. Pavesi, S. Gaponenko, and L. Dal Negro (Kluwer Academic, Dordrecht, 2003), p. 445.
B. A. Andreev, T. Gregorkevich, Z. F. Krasil’nik, V. P. Kuznetsov, D. I. Kuritsyn, M. V. Stepikhova, V. G. Shengurov, V. B. Shmagin, A. N. Yablonskii, and W. Jantsch, Izv. Akad. Nauk, Ser. Fiz. 67(2), 273 (2003).
V. B. Shmagin, D. Yu. Remizov, Z. F. Krasil’nik, V. P. Kuznetsov, V. N. Shabanov, L. V. Krasil’nikova, D. I. Kryzhkov, and M. N. Drozdov, Fiz. Tverd. Tela (St. Petersburg) 46(1), 110 (2004) [Phys. Solid State 46, 109 (2004)].
F. G. Chynoweth and K. G. McKay, Phys. Rev. 102(2), 369 (1956).
S. Coffa, G. Franzo, and F. Priolo, Appl. Phys. Lett. 69(14), 2077 (1996).
W.-X. Ni, C.-X. Du, K. B. Joelsson, G. Pozina, and G. V. Hansson, J. Lumin. 80(1–4), 309 (1999).
N. A. Sobolev, Yu. A. Nikolaev, A. M. Emel’yanov, K. F. Shtel’makh, P. E. Khakuashev, and M. A. Trishhenkov, J. Lumin. 80(1–4), 315 (1999).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 95–98.
Original Russian Text Copyright © 2005 by Remizov, Shmagin, Antonov, Kuznetsov, Krasil’nik.
Rights and permissions
About this article
Cite this article
Remizov, D.Y., Shmagin, V.B., Antonov, A.V. et al. Effective excitation cross section and lifetime of Er3+ ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy. Phys. Solid State 47, 98–101 (2005). https://doi.org/10.1134/1.1853454
Issue Date:
DOI: https://doi.org/10.1134/1.1853454