Abstract
The possibility of using sublimation molecular-beam epitaxy as an efficient method for growing erbium-doped silicon layers on sapphire substrates for optoelectronic applications is analyzed. The advantage of this method is that the erbium-doped silicon layers can be grown at relatively low temperatures. The use of sublimation molecular-beam epitaxy makes it possible to grow silicon layers of good crystal quality. It is demonstrated that the growth temperature affects not only the structure of silicon-on-sapphire layers but also the crystallographic orientation of these layers. The electrical and luminescence properties of the erbium-doped silicon layers are discussed. It is revealed that structures of this type exhibit intense erbium photoluminescence at a wavelength of 1.54 μm.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 86–89.
Original Russian Text Copyright © 2005 by Shengurov, Pavlov, Svetlov, Chalkov, Shilyaev, Stepikhova, Krasil’nikova, Drozdov, Krasil’nik.
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Shengurov, V.G., Pavlov, D.A., Svetlov, S.P. et al. Heteroepitaxy of erbium-doped silicon layers on sapphire substrates. Phys. Solid State 47, 89–92 (2005). https://doi.org/10.1134/1.1853452
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DOI: https://doi.org/10.1134/1.1853452