Abstract
The photoluminescence of quantum dots in Si/Ge/SiO2/Si and Si/Ge/Si structures is investigated as a function of temperature. The low activation energies for the temperature quenching of photoluminescence of germanium quantum dots in both structures are explained in terms of the thermally stimulated capture of holes from quantum dots to the energy levels of defects localized in their vicinity.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 80–82.
Original Russian Text Copyright © 2005 by Shamirzaev, Seksenbaev, Zhuravlev, Nikiforov, Ul’yanov, Pchelyakov.
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Shamirzaev, T.S., Seksenbaev, M.S., Zhuravlev, K.S. et al. Photoluminescence of germanium quantum dots grown in silicon on a SiO2 submonolayer. Phys. Solid State 47, 82–85 (2005). https://doi.org/10.1134/1.1853450
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DOI: https://doi.org/10.1134/1.1853450