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Shallow acceptor levels in Ge/GeSi heterostructures with quantum wells in a magnetic field

  • Proceedings of the Conference “Nanophotonics 2004” (Nizhni Novgorod, Russia, May 2–6, 2004)
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Abstract

Shallow acceptors in Ge/GeSi heterostructures with quantum wells are studied theoretically and experimentally in the presence of a magnetic field. It is shown that, in addition to the cyclotron resonance lines, magnetoabsorption spectra reveal transitions from the acceptor ground state to excited states related to Landau levels from the first and second confinement subbands, as well as the resonances caused by ionization of A + centers.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. Ya. Aleshkin, A. V. Antonov, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov, D. V. Kozlov & K. E. Spirin

  2. Research Physicotechnical Institute, Lobachevskii State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia

    O. A. Kuznetsov

Authors
  1. V. Ya. Aleshkin
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  2. A. V. Antonov
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  3. D. B. Veksler
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  4. V. I. Gavrilenko
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  5. I. V. Erofeeva
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  6. A. V. Ikonnikov
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  7. D. V. Kozlov
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  8. O. A. Kuznetsov
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  9. K. E. Spirin
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 74–79.

Original Russian Text Copyright © 2005 by Aleshkin, Antonov, Veksler, Gavrilenko, Erofeeva, Ikonnikov, Kozlov, Kuznetsov, Spirin.

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Aleshkin, V.Y., Antonov, A.V., Veksler, D.B. et al. Shallow acceptor levels in Ge/GeSi heterostructures with quantum wells in a magnetic field. Phys. Solid State 47, 76–81 (2005). https://doi.org/10.1134/1.1853449

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